Transparent UV photodetector was achieved by using wide bandgap metal oxide materials. In order to realize transparent heterojunction UV photodetector, n-type ZnO and p-type NiO metal oxide materials were employed. High light-absorbing SnS layer was inserted into the n-ZnO and p-NiO layers. High-performing UV photodetector was realized by ZnO/SnS/NiO/ITO structures to provide extremely fast response times (Fall time: 7 μ s and rise time: 13 μs) and high rectifying ratio. The use of functional SnS-embedded photodetector would provide a route for high functional photoelectric devices.
Tailoring microstructural and optoelectronic properties of ZnOx thin film via oxygen content in radio frequency reactive magnetron sputtering A. Chelouche, T. Touam, D. Mendil, D. Djouadi, F. Challali Journal of Materials Science: Materials in Electronics.2025;[Epub] CrossRef
Structural, Electrical, and Optical Properties of AZO Thin Films Subjected to Rapid Thermal Annealing Temperature Jae Yong Jung, Shin Ho Cho Journal of Korean Institute of Electrical and Electronic Materials Engineers.2010; 23(4): 280. CrossRef
Fabrication and Characteristics of ZnO TFTs for Flexible Display using Low Temp Process Young Su Kim, Min Ho Kang, Dong Ho Nam, Kang Il Choi, Hi Deok Lee, Ga Won Lee Journal of Korean Institute of Electrical and Electronic Materials Engineers.2009; 22(10): 821. CrossRef
Effects of Deposition Temperature on the Properties of InN Thin Films Grown by Radio-frequency Reactive Magnetron Sputtering Shin Ho Cho Journal of Korean Institute of Electrical and Electronic Materials Engineers.2009; 22(10): 808. CrossRef
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