In this study, the dielectric and electrical properties of high-capacitance base metal electrode (BME) multilayer ceramic capacitors (MLCCs) fabricated using a BaTiO₃-MgO-Mn₃O₄-(Na₀.₅Bi₀.₅)TiO₃ (NBT)-(BaCa)SiO₃ dielectric system were investigated under reducing atmospheres with oxygen partial pressures (PO₂) ranging from 10⁻1⁰ to 10⁻12 MPa. By incorporating NBT, the dielectric performance remained stable across the entire range of reducing atmospheres. The fabricated MLCCs exhibited consistent capacitance values, low dielectric loss (<2.8%), and high insulation resistance, reaching up to 2.4 GΩ at 25℃ and 0.675 GΩ at 125℃. Furthermore, excellent breakdown voltage performance (up to 550 V at 25℃) and Class II-compatible temperature coefficient of capacitance (TCC) behavior were observed, meeting the X8R specification. The BaTiO₃-MgO-Mn₃O₄-NBT-(BaCa)SiO₃ dielectric system demonstrates that NBT can serve as a promising alternative to conventional rare-earth dopants in BME MLCCs, enabling excellent thermal and electrical stability, high capacitance, and longterm reliability even under reducing conditions. These results confirm the feasibility of developing cost-effective, sustainable, and rare-earth-free MLCCs for high-performance applications in automotive, industrial, and energy storage systems.
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Flexible piezoelectric cross-bar array sensors for upper-limb kinesthetic sensing via muscle dynamics Junki Lee, Jihun Choi, Hyunseung Kim, Min Gon Son, Dong Yeol Hyeon, Jung Hwan Park, Andris Šutka, Chang Kyu Jeong Journal of the Korean Ceramic Society.2026;[Epub] CrossRef
(1-x)Bi0.5(Na0.78K0.22)0.5TiO3-xLaFeO3 ceramics were fabricated using a solid state reaction method. The microstructural, ferroelectric and piezoelectric properties were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM), and polarization hysteresis loops (P-E). XRD results indicated that BNKT ceramic crystal structure modified by LaFeO3 was transformed from a ferroelectric tetragonal to a non-polar pesudo-cubic phase with increased LaFeO3 content. The improved piezoelectric properties resulted from the addition of LaFeO3 up to 3 mol%. The LaFeO3 3mol% sample showed markedly improved piezoelectric and strain behaviors in comparison with pure BNKT ceramic.
To investigate excess Na+ effect, Bi0.5(Na0.78+xK0.22)0.5TiO3 (0≤x≤0.05) (BNKT) ceramics were prepared by using a conventional solid-state reaction method. The structure and ferroelectric properties of BNKT ceramics were characterized by XRD (X-ray diffraction) and polarization dependence by external electric field. Also, the temperature dependence of dielectric constant and loss were studied. From these results, it was found that appropriate excess Na+ into BNKT ceramics compensate the volatility and induce dense ceramics. The enhanced piezoelectric coefficient (158 pC/N) and depolarization temperature (202℃) were obtained for the x=0.01 composition.
Recently perovskite materials with much cheaper cost and marvellous optoelectronic properties have been studied for next generation LED display devices overseas. Technology development trends of inorganic CsPbX3(X=halogen) based LEDs (PeLEDs) with assumed high stability were investigated on literature worldwide. It was found that syntheses methods of these nanocrystals (NCs, mainly quantum dots, QDs) made great progress. A new room temperature synthesis method showed outstanding PL (photoluminescence) properties such as high quantum yield (QY), narrow emission width, storage stability comparable with, or often exceeding those of conventional hot injection method and CdSe@ZnS type inorganic colloidal QDs. PeLEDs with shell layers might be more promising, indicating urgent real research start of this solution processing technology for small businesses in Korea.
(Na,K)NbO3-based piezoelectric ceramics were synthesized by a solid phase sintering method with various milling solvents. The solvents were varied with acetone, ethanol, and pure water to investigate the effect on the microstructure and electrical properties. NKN ceramics showed the maximum values of the relative density (94%), the mechanical quality factor (Qm: 78) and the electro-mechanical coupling factor (kp: 0.25) at the ethanol solvent. It might mean that a solid phase sintering of the NKN piezoelectrics with a suitable solvent could improve the relative density and the piezoelectric properties.
Bi0.5+x(Na0.78K0.22)0.5-3xTiO3 ceramics with an excess Bi3+ and a deficiency of Na+ and K+ were synthesized by a conventional solid state reaction method. The structure and morphology ofBi0.5+x(Na0.78K0.22)0.5-3xTiO3 ceramics were characterized by X-ray diffraction and field emission scanning electron microscopy. The electric polarization and mechanical strain induced by external electric field, and the temperature dependence of dielectric constant were investigated. These results demonstrated that anergodic relax or phase can be induced by controls of the mole ratio of Bi3+, Na+ and K+. A phase boundary between non-ergodic and ergodic relaxor phases can be observed at ambient temperature. Theergodic relaxor phase can be transferred to the ferroelectric phase by application of the electric field. The stability of the induced ferroelectric phases strongly depends on the mole ratio of Bi3+, Na+ and K+. The maximum strain of 0.31% was observed in Bi0.51(Na0.78K0.22)0.47TiO3 ceramics sintered at 1,150℃ for 2 h.
Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high t emperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.
To stabilize the electric characteristic of Silicon Thin Film Transistor, reducing the current leakage is most important issue. To reduce the current leakage, many ideas were suggested. But the increse of mask layer also increased the cost. On this research Bird`s Beak process was use to present element. Using Silvaco simulator, it was proven that it was able to reduce current leakage without mask layer. As a result, it was possible to suggest the structure that can reduce the current leakage to 1.39nA without having mask layer increase. Also, I was able to lead the result that electric characteristic (on/off current ratio) was improved compare from conventional structure.
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