This paper was researched about 1,200 V level floating island IGBT (insulated gate bipolar transistor). Presently, 1,200 V level IGBT is used in Inverter for distributed power generation. We analyzed and compared electrical charateristics of the proposed floating island IGBT and conventional IGBT. For analyzing and comparison, we used T-CAD tool and simulated the electrical charateristics of the devices. And we extracted optimal design and process parameter of the devices. As a result of experiments, we obtained 1,456 V and 1,459 V of breakdown voltages, respectively. And we obatined 4.06 V and 4.09 V of threshold voltages, respectively. On the other hand, on-state voltage drop of floating island IGBT was 3.75 V. but on-state vlotage drop of the conventional IGBT was 4.65 V. Therefore, we almost knew that the proposed floating island IGBT was superior than the conventional IGBT in terms of power dissipation.

In this study, p-type thin film transistors consisting of CuO channels were fabricated by sol-gel process, with copper (II) acetate monohydrate precursors. At 500℃, the deposited films were fully converted into monoclinic phase CuO. The fabricated CuO thin film transistors deliver field effect mobility in saturation regime of 0.015㎠/Vs, and I_on/I_off of ~10³. The degradation of the performance of the fabricated CuO thin film transistor caused by the exposure to air has been studied.

In this paper, a underwater acoustic Tonpilz transducer with the piezoelectric single crystal(72PMN-28PT) is developed. The thickness and the number of piezoelectric elements are theoretically designed with the equivalent circuit analysis to have the desired resonance frequency. In order to compare the performances, a piezoelectric ceramic transducer is also manufactured and their electrical impedance, TVR (transmitting voltage response), RVS (receiving voltage response) and beam pattern are compared.

Alumina added with Mn3O4 up to 7.5 cat% of Mn was prepared by conventional ceramic processing, and the sintering behavior and the optical properties of which were studied as functions of Mn content. Densification and grain growth of alumina were enhanced by Mn addition up to 0.75 cat% but was leveled off at higher concentrations. XRD revealed that Al₂MnO₄(galaxite) was formed as a second phase in the specimens with more than 0.75 cat% of Mn. Thus it is believed that either the solid solution effect of Mn or the Zener effect of Al2MnO4 becomes predominant in the sintering of Mn-added Al₂O₃ according to the additive concentration. UV-VIS reflectivity(SCI) spectra of Mn-added Al₂O₃ consisted of smooth bottoms in 300~550 nm wavelength range and plateaus at wavelengths longer than 650 nm. The reflectivity spectrum continuously moved downward, and the specimen color became darker and thicker with increasing Mn content. The CIELAB color change with respect to standard white was also dependent on the amount of Mn added: TRIANGLE L^{*} (D65) negatively increased and TRIANGLE E _{ab} ^{*} (D65) positively increased with increasing Mn content, probably due to Mn substitution to Al and/or the mixing effect of black Al₂MnO₄ as a second phase.

SrSnO₃:Tb³⁺ phosphor thin films were prepared on sapphire and quartz substrates in the growth temperature range of 100∼400℃ by using the radio frequency magnetron sputtering deposition. The resulting SrSnO₃:Tb³⁺ thin films were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible-infrared spectrophotometer, and photoluminescence spectrometer. The results indicated that the morphology, optical transmittance, band gap energy, and luminescence intensity of the phosphor thin films significantly depended on the growth temperature. All the thin films, regardless of the type of substrate, showed an amorphous behavior. As for the thin films deposited on sapphire substrate, the maximum crystallite size was obtained at a growth temperature of 400℃ and the strongest emission was green at 544 nm arising from the ⁵D₄→⁷F₅ transition of Tb³+. The average optical transmittance for all the thin films grown on sapphire and quartz substrates was decreased as the growth temperature increased from 100 to 400℃. The results suggest that the optimum growth temperatures for depositing highly-luminescent SrSnO₃:Tb³⁺ phosphor thin films on sapphire and quartz substrates are 400 and 300℃, respectively.

Goethite, α-FeOOH have various applications such as absorbent, pigment and source for magnetic materials. Goethite particles were synthesized in a two step process, where Fe(OH)₂ were synthesized in nitrogen atmosphere using FeSO₄ as a raw material in the first process, and after that acicular goethite particles were obtained in an air oxidation process of Fe(OH)₂ in highly alkaline aqueous solution. Their phase and microstructure were investigated with XRD and FE-SEM. It was found that the morphology of goethite and the ratio of length-to-width (aspect ratio) of acicular goethite are dependent on the some factors such as R value (OH-/Fe²⁺), air flow rate and pH conditions. In particular, R value has the strongest influence on the synthesized goethite morphology. It is considered that the optimal value R is 4.5 because X-ray diffraction peaks of goethite have the highest intensity at that value. Morphology of goethite particles was controlled by air flow rates, showing that their size and aspect ratio are getting smaller and decrease, respectively as air flow rate increases. The largest goethite particle obtained is about 1,500 nm in length and 150 nm in diameter.

This study examined the malfunction mode of the HCMOS IC under narrow-band high-power electromagnetic wave. Magnetron is used to a narrow-band electromagnetic source. MFR (malfunction failure rate) was measured to investigate the HCMOS IC. In addition, we measured the resistance between specific pins of ICs, which are exposed and not exposed to the electromagnetic wave, respectively. As a test result of measurement, malfunction mode is shown in three steps. Flicker mode causing a flicker in LED connected to output pin of IC is dominant in more than 7.96 kV/m electric field. Self-reset mode causing a voltage drop to the input and output of IC during electromagnetic wave radiation is dominant in more than 9.1 kV/m electric field. Power-reset mode making a IC remained malfunction after electromagnetic radiation is dominant in more than 20.89 kV/m. As a measurement result of pin-to-pin resistance of IC, the differences between IC exposed to electromagnetic wave and normal IC were minor. However, the five in two hundred IC show a relatively low resistance. This is considered to be the result of the breakdown of pn junction when latch-up in CMOS occurred. Based on the results, the susceptibility of HCMOS IC can be applied to a basic database to IC protection and impact analysis of narrow-band high-power electromagnetic waves.

In this work, the complex permittivity of epoxy resins is measured. Epoxy resins, epoxy with micro size fillers and epoxy with micro+nano alumina composites have been evaluated for dielectric properties according to frequency variation. The dielectric spectroscopy measurement and analyses are carried out in the frequency range of 10^-2 Hz to 1MHz and constant to room temperature. The results of dielectric loss suggest that significant improvement in the electrical performance can be expected by using samples containing nano and micro fillers mixture when compared to materials containing only microfillers. As the result, we verified the specific characteristics of dielectric permittivity and dielectric loss namely, relative permittivity become low with improving dispersibility of nano+micro mixture composites and become rise with agglomerate of nano particles.

Recently, there has been much focus on the controlled alignment and patterning process of nanowires for nanoelectronic devices. A simple and effective method for patterning of highly aligned nanowires using a microcontact printing technique is demonstrated. In this method, nanowires are first directionally aligned by contact printing, following which line and space micropatterns of nanowire arrays are accomplished by microcontact printing with a micro patterned NOA mold.

Single-layered transition metal dichalcogenides (TMDs) exhibit more interesting physical properties than those of bulk TMDs owing to the indirect to direct bandgap transition occurring due to quantum confinement. In this research, we demonstrate that layer-by-layer laser etching of molybdenum diselenide (MoSe₂) flakes could be controlled by varying the parameters employed in laser irradiation (time, intensity, interval, etc.). We observed a dramatic increase in the photoluminescence (PL) intensity (1.54 eV peak) after etching the samples, indicating that the removal of several layers of (MoSe₂) led to a change from indirect to direct bandgap. The laser-etched (MoSe₂) exhibited the single (MoSe₂) Raman vibration modes at ~239.4 cm^-1 and ~295 cm^-1, associated to out-of-plane A_1g and in-plane E¹ _2g Raman modes, respectively. These results indicate that controlling the number of MoSe2 layers by laser etching method could be employed for optimizing the performance of nano-electronic devices.

Piezoelectric thick films of a soft Pb(Zr,Ti)O₃ (PZT) based commercial material were produced by a conventional tape casting method. Thereafter, the interdigitated (IDT) Ag-Pd electrode pattern was printed on the 25 ㎛ thick piezoelectric film at room temperature. Co-firing of the 10-layer laminated piezoelectric thick films was conducted at 1,100℃ and 1,150℃ for 1 h, respectively. Piezoelectric cantilever energy harvesters were successfully fabricated using the IDT electrode pattern embedded piezoelectric laminates for 3-3 operation mode. Their energy harvesting characteristics were investigated with an excitation of 120 Hz and 1 g under various resistive loads (ranging from 10 kΩ to 200 kΩ). A parabolic increase of voltage and a linear decrease of current were shown with an increase of resistive load for all the energy harvesters. In particular, a high output power of 3.64 mW at 100 kΩ was obtained from the energy harvester (sintered at 1,150℃).

P3HT:PCBM bulk heterojunction solar cells added with ferroelectric polymer were fabricated and characterized. By incorporating P3HT:PCBM solar cell with P(VDF-TrFE) ferroelectric additive, the power conversion efficiency was increased up to nearly 50%. Photoacoustic analysis on this phenomena was carried out for the first time. Through this study, we find that the ferroelectricity of the polymer additive plays the key role in the enhancement of the power conversion efficiency of the organic solar cell by suppressing the non-radiative recombination of charge transfer exciton more effectively.