The mounting demand for sustainable, self-powered biomedical devices, particularly those engineered for extreme environments, has established triboelectric nanogenerators (TENGs) as a prominent technology in energy harvesting research. This review examines state-of-the-art biomaterial synthesis strategies essential for developing high-performance bioelectronic TENGs that can operate reliably under harsh conditions, including elevated temperatures, extreme humidity, and mechanical strain. It begins with a comprehensive overview of the fundamental principles of triboelectricity and subsequently addresses the pivotal challenges associated with efficient charge generation and retention in such challenging settings. The content places particular emphasis on recent advancements in composite material engineering and structure design for high-efficiency mechanisms, with a particular focus on biocompatible and environmentally resilient materials. The integration of TENGs into wearable sensors, implantable devices, and self-powered monitoring systems is also investigated, demonstrating their transformative potential for bioelectronic applications. Our goal subsequently underscores persistent limitations to overcome, including those pertaining to fabrication scalability and long-term operational stability, while concurrently proposing prospective research directions. Consequently, this work underscores how innovative biomaterial synthesis and bioelectronic devices can enable the development of next-generation, high-performance, self-powered devices suited for extreme biomedical environments.

The rapid evolution of wearable technology has driven a surge in demand for sustainable, self-powered electronic devices. Flexible thermoelectric materials, capable of converting body heat into electricity, have emerged as a promising solution for powering next-generation wearables. This review comprehensively examines recent progress in organic (polymer-based) and hybrid thermoelectric materials, focusing on their design, fabrication, and integration into flexible architectures suitable for conformal contact with human skin. Key developments include advanced doping strategies, post-treatment techniques, and composite engineering, particularly in conductive polymers such as PEDOT: PSS and P3HT, which have significantly enhanced power factors and mechanical flexibility. Additionally, the integration of high-performance inorganic materials into stretchable systems has further elevated device efficiency and durability. The review highlights breakthroughs, ongoing challenges, and future opportunities in realizing practical, scalable, and high-efficiency wearable thermoelectric generators for sustainable energy harvesting applications.

Rietveld refinement has become an essential tool for the quantitative analysis of crystal structures in polycrystalline systems using X-ray diffraction data. This tutorial paper focuses on the background, case studies, and practical implementation of Rietveld refinement using the open-source software PROFEX. Key structural parameters, such as lattice constants and phase fractions, can be quantitatively extracted through full-pattern fitting. Case studies involving compositional variation, electric fields, temperature changes, and battery cycling demonstrate the broad applicability of Rietveld refinement in materials science, energy storage, and catalysis. A step-by-step procedure for performing Rietveld refinement is presented using Bi_1/2Na_1/2TiO₃ perovskite ceramic as an example, providing guidance on software installation, preparing crystal structure information files, performing Rietveld refinement, evaluating results using R-factor and χ² values, and summarizing the results. This tutorial aims to improve understanding and accessibility of Rietveld refinement for researchers seeking to investigate structure-property relationships in complex material systems.

Ga₂O₃ is an ultra-wide bandgap semiconductor material that offers superior electrical properties for high-voltage power electronics but suffers from poor thermal conductivity compared to conventional semiconductors. To overcome this thermal limitation, we developed Ga₂O₃/4H-SiC heterojunction Schottky barrier diodes that utilize the high thermal conductivity of SiC substrates. Using the aerosol deposition method, we successfully fabricated devices with different Ga₂O₃ film thicknesses (0.8-1.4 μm) and achieved exceptional electrical performance with the 0.8 μm device showing a specific on-resistance of 41 mΩ·cm² and a leakage current as low as 1.26 × 10^-10 A/cm² while maintaining stable operation up to 200℃. The devices demonstrated breakdown voltages reaching 2,365 V and maintained excellent rectification ratios above 1010 even at elevated temperatures. All fabricated devices with different film thicknesses showed consistent high-temperature stability, confirming the effectiveness of the heterojunction approach. These results provide a viable pathway for developing thermally stable, high-performance power devices essential for next-generation electric vehicle and renewable energy applications

Silicon carbon nitride (SiCN) thin films are promising materials for copper diffusion barriers and hybrid bonding in semiconductor processes. Oxidation-resistant films are increasingly critical for realizing high-reliability devices, highlighting the need for process control and property evaluation. In this study, we analyzed the thin film properties as a function of tetramethylsilane (4MS) gas partial pressure ratio (PPR), deposition temperature, and dual-power plasma conditions in a PECVD-based SiCN deposition process. Based on the results, we experimentally demonstrated that the refractive index can be a valid indicator for oxidation resistance evaluation. The application of dual-power plasma conditions was instrumental in enhancing oxidation resistance. Under these conditions, the refractive index reached approximately 1.90 even at 200℃, comparable to values observed in films deposited at 350℃. These findings provide a basis for predicting oxidation resistance and optimizing low-temperature conditions, with applications in next-generation semiconductor and packaging technologies requiring high reliability.

Multilayer ceramic capacitors (MLCCs) are essential for high-capacitance, miniaturized, and reliable electronic applications. This study examines the impact of layer stacking on the dielectric and electrical properties of MLCCs using a BaTiO₃-based dielectric with MgO, Mn₃O₄, Yb₂O₃, V₂O₅, and (BaCa)SiO₃ glass additives. MLCCs with 10 um-thick dielectric layers and varying Ni electrode layers (10, 30, 50, and 100 layers) were fabricated. The dielectric constant increases significantly up to 30 layers due to compressive stress and sintering densification but it becomes linear beyond 30 layers. Dissipation factor and ESR decrease with higher stacking due to improved sinterability, while breakdown voltage declines exponentially from defect accumulation and thermal stress. Insulation resistance decreases but stabilizes relative to capacitance. C-V results show stress-induced polarization suppression, which reduces the dielectric constant under high voltage. Optimized stacking and sintering conditions are crucial for MIL-PRF-32535 compliant MLCC designs.

Thermal batteries are designed to activate at high temperatures (~500℃), therefore, the electrodes used in these systems are typically made into pellet form using compression molding techniques that do not involve polymer binders. However, the compression molding technique poses limitations in scaling up the electrode area without increasing thickness for high-power properties. Additionally, the tape casting method has been studied as a way to solve with, but too low a loading level is still an obstacle to practical use. This study fabricated a film cathode of high loading level (35.79 mAh·cm^-2) using the tape casting method for these problem. As utilized fabricated cathode, it investigated the influence of electrode thickness and density on electrochemical performance. Furthermore, a film cathode with a larger area but the same amount of active material as the pellet was fabricated, enabling the design of high-power cells with the same energy density. We expect that the fabricated film cathode with a high loading level and scalable area will enable the development of various thermal battery designs.

With the advancement of the information society, the demand for highly integrated and multi-functional electronic devices is rapidly increasing. To meet these demands, high-performance transistors with low power consumption, high-speed operating, and mechanical flexibility are essential. Among various candidates, semiconducting single-walled carbon nanotubes (s-SWCNT)-based transistors, which exhibit intrinsically ambipolar characteristics, have emerged as promising components for CMOS-like circuits. In this study, s-SWCNT were selectively dispersed using rr-P3DDT, a thiophene-based conjugated polymer, and filed-effect transistors (FETs) were fabricated by inducting directional alignment for enhanced charge transport through an off-centered spin-coating process. The electrical characteristics of the fabricated s-SWCNT FETs were evaluated under various thermal annealing conditions (100℃, 150℃, 200℃, and 250℃). Off-centered spin-coated and high temperature annealed s- SWCNT FETs exhibited high field-effect mobilities over 5 cm²/Vs in both p-type and n-type operation, along with ideal Vshaped ambipolar transfer curves. These results indicate a significant enhancement in ambipolar performance due to efficient desorption of residual oxygen and water molecules in active channel via high temperature annealing. Furthermore, CMOS-like inverter circuits demonstrated an ideal inversion voltage (VIN = V_DD/2) and a high voltage gain of approximately 9.5. These findings highlight the potential of SWCNT-based materials for realizing next-generation flexible electronic circuits that combine high-performance, energy efficiency, and simplified solution-processing.

To ensure the long-term reliability of flexible photovoltaic (FPV) modules, it is crucial to develop an effective moisture barrier layer that prevents the infiltration of moisture and oxygen. We developed such a layer composed of parylene (700 nm) and AlOx (70 nm), optimizing its material properties, moisture-blocking performance, and processing conditions. The barrier layer applied to the Ethylene Tetrafluoroethylene (ETFE) substrate demonstrated a water vapor transmission rate (WVTR) of 6.33 × 10^-2 g/m²/day and an average visible light transmittance (AVT) of 85.3% over the 380-780 nm wavelength range. For the FPV module with this barrier, Damp/Heat (DH) reliability testing was conducted at 85℃ and 85% relative humidity for up to 1,000 hours. During testing, the power conversion efficiency (PCE) decreased slightly from 25.4% (0 hr) to 24.7% (1,000 hr), reflecting a minimal reduction of only 0.7%. The primary cause of degradation was identified as a -4% relative change in shortcircuit current density (JSC) before and after DH testing. Consequently, the ETFE/parylene/AlOx multilayer moisture barrier proved highly effective in ensuring the long-term reliability of solar modules.

In this study, the dielectric and electrical properties of high-capacitance base metal electrode (BME) multilayer ceramic capacitors (MLCCs) fabricated using a BaTiO₃-MgO-Mn₃O₄-(Na₀.₅Bi₀.₅)TiO₃ (NBT)-(BaCa)SiO₃ dielectric system were investigated under reducing atmospheres with oxygen partial pressures (PO₂) ranging from 10⁻1⁰ to 10⁻12 MPa. By incorporating NBT, the dielectric performance remained stable across the entire range of reducing atmospheres. The fabricated MLCCs exhibited consistent capacitance values, low dielectric loss (<2.8%), and high insulation resistance, reaching up to 2.4 GΩ at 25℃ and 0.675 GΩ at 125℃. Furthermore, excellent breakdown voltage performance (up to 550 V at 25℃) and Class II-compatible temperature coefficient of capacitance (TCC) behavior were observed, meeting the X8R specification. The BaTiO₃-MgO-Mn₃O₄-NBT-(BaCa)SiO₃ dielectric system demonstrates that NBT can serve as a promising alternative to conventional rare-earth dopants in BME MLCCs, enabling excellent thermal and electrical stability, high capacitance, and longterm reliability even under reducing conditions. These results confirm the feasibility of developing cost-effective, sustainable, and rare-earth-free MLCCs for high-performance applications in automotive, industrial, and energy storage systems.

With the ongoing rise in renewable energy demand, offshore wind farms are rapidly expanding, increasing the need for advanced development and diagnostic techniques for submarine cables. These cables are essential for efficient and reliable power transmission. A critical issue with these submarine cables is the formation of internal hot spots, which can deteriorate the insulation’s performance and negatively impact the overall reliability of offshore wind energy infrastructure. This research focuses on developing an innovative real-time monitoring system to detect hot spots within submarine cable insulation under varying electrical loads. Experimental tests were conducted on a 66 kV-grade wet-type submarine cable specifically designed for offshore wind applications, applying incremental current loads ranging from 200 A to 500 A. Temperature changes within the insulation due to the generated heat were continuously monitored using Distributed Temperature Sensing (DTS). Additionally, to evaluate the DTS system’s precision, repeatability, and overall reliability, the measured temperatures were compared against values obtained from validated spot-type sensors. Experimental results showed a discrepancy of less than 1% between DTS and spot-type sensor measurements at a reference temperature of 60℃, demonstrating the high accuracy and reliability of the developed DTS-based monitoring system. The outcomes of this study suggest that the proposed monitoring system can significantly enhance the capability for early detection and continuous monitoring of hot spots, thereby improving the operational reliability of submarine cables employed in offshore wind energy installations.

Molybdenum disulfide (MoS₂) is a promising 2D semiconductor material for low-power electronics due to its excellent electrical properties and compatibility with conventional processes. In this study, MoS₂ thin films deposited by RF sputtering were etched using Cl₂/Ar plasma in an ICP system. The effects of Cl₂ gas ratio, RF power, and process pressure on etch rate and MoS₂/SiO₂ selectivity were investigated. Optimal results were obtained at 25% Cl₂, achieving ~38 nm/min etch rate and selectivity of 3.0. Increased source power improved both etch rate and selectivity, while higher bias power enhanced etching but reduced selectivity due to stronger ion bombardment. XPS analysis confirmed Mo－Cl and S－Cl bond formation after etching, indicating chemical reactions and some by-product residue. These results provide insights into optimized plasma etching of sputtered MoS₂ films for advanced 2D device fabrication

Cathodoluminescence (CL) spectroscopy provides valuable insights into the optical and electronic properties of materials by analyzing photon emission induced by electron beam excitation. In this study, we present a novel CL detection system integrated into a transmission electron microscope (TEM) specimen stage, enabling high-resolution optical analysis of internal microstructures. The system features a parabolic mirror, a focusing lens, and a UV-VIS range optical fiber to maximize light collection and transmission efficiency, with performance further enhanced by a liquid nitrogen cooling setup. Using this system, we successfully performed CL mapping of InGaN/GaN multiple quantum wells (MQWs) and GaN thin films. The results revealed that threading dislocations act as non-radiative centers in GaN and locally increase the bandgap energy in InGaN MQWs, causing a blue-shift in CL emission. These findings support a model in which dislocations induce carrier delocalization, preserving high radiative efficiency despite high dislocation densities. This work demonstrates the effectiveness of the TEM-integrated CL system for nanoscale optical characterization, offering a new pathway for studying defect-related phenomena in semiconductor materials.

With the rapid development of digital technologies such as IoT, AI, and big data, electrical energy consumption is rapidly increasing. Electrical facilities that supply electrical energy are operated with high reliability and stability for end-of-life time. In addition, depending on the type of electrical load that consumes electrical energy in various forms, electrical insulation systems deteriorate due to electrical and thermal stress, which reduces electrical and mechanical insulation strength. Due to such continuous stress and electrical transient phenomena, electrical facilities may experience electrical accidents due to electrical insulation breakdown before the expected design lifetime. In addition, periodic inspections according to related regulations must be conducted to prevent unexpected electrical accidents, but this leads to problems in which the electrical facilities cannot be turned off. Therefore, it is believed that an uninterruptible diagnostic judgment technique that determines compliance with related regulations such as electrical facility technology standards, internal wiring regulations, and inspection regulations without turning off the electrical facilities and at the same time detects abnormal conditions of the facilities early, it is possible to prevent electrical accidents and improve the efficiency of electrical facilities. In this paper, we propose an uninterruptible power diagnosis judgment technique that can prevent or reduce electrical accidents in cast-iron transformers by applying judgment criteria of diagnostic sensors for various types of measurement parameters that can diagnose and evaluate the presence or absence of abnormalities in electrical equipment, including partial discharge, and AI algorithms learned from data of diagnostic sensors.

Abstract In this study, to develop composition ceramics for energy harvesting devices, Pb(Ni_1/3Nb_2/3)O₃-Pb(Zr Ti)O₃ system ceramics substituted with Pb(Mg_1/2W_1/2)O₃ were manufactured by conventional mixed oxide method using Li₂CO₃ and Na₂CO₃ (LNCO) as sintering aids. Their microstructure and piezoelectric properties were also investigated. At the specimen sintered at 930℃, high values of piezoelectric properties appeared: the dielectric constant (εr) of 2,522 planar electromechanical coupling factor kp of 0.602, and k₃₁ of 0.385, d31 = 229 [pC/N], g₃₁ = 10.13 [mV.m/N], Qm of 70, respectively. These values were suitable for the application of devices such as energy harvesting devices and ultrasonic devices.

NTC (negative temperature coefficient) thermistors are semiconductor ceramics whose resistance decreases with increasing temperature, making them essential components in various temperature sensing applications. Typically, ceramic materials are sintered at high temperatures exceeding 1,150°C. However, in laminated devices incorporating internal electrodes, co-sintering can lead to cracking and mechanical failure due to mismatches in the thermal expansion coefficients between the ceramic layers and metal-based electrodes. Moreover, the use of noble metal electrodes increases production costs. To address these challenges, a low-temperature sintering approach is required. Previous studies have demonstrated that incorporating glass frit can reduce the sintering temperature of ceramics, although this often results in increased electrical resistance. In this study, NiMnCoO₄ (NMC) ceramics, as a representative NTC thermistor composition, were prepared with the addition of 10 wt% glass frit. To mitigate the resulting increase in resistivity, trace amounts (1 wt%) of various metal oxides, including CuO, ZnO, and MnO, were introduced. Among these, the addition of CuO notably decreased both the resistivity and B constant values. In contrast, MnO had little effect on resistivity, while ZnO led to an increase. With respect to the B25/85 constant, samples containing MnO and ZnO exhibited higher values than those without metal oxide additives. These findings indicate that the incorporation of 1 wt% CuO is effective in reducing the increased resistivity in NMC ceramics subjected to low-temperature sintering via glass frit addition.