Defects in solids play a vital role on thermoelectric properties through the direct impacts of electronic band structure and electron/phonon transports, which can improve the electronic and thermal properties of a given thermoelectric semiconductor. Defects in semiconductors can be divided into four different types depending on their geometric dimensions, and thus understanding the effects on thermoelectric properties of each type is of a vital importance. This paper reviews the recent advances in the various thermoelectric semiconductors through defect engineering focusing on the charge carrier and phonon behaviors. First, we clarify and summarize each type of defects in thermoelectric semiconductors. Then, we review the recent achievements in thermoelectric properties by applying defect engineering when introducing defects into semiconductor lattices. This paper ends with a brief discussion on the challenges and future directions of defect engineering in the thermoelectric field.

In functional materials, in situ experimental techniques as a function of external stimulus (e.g., electric field, magnetic field, light, etc.) or changes in ambient environments (e.g., temperature, humidity, pressure, etc.) are highly essential for analyzing how the physical properties of target materials are activated/evolved by the given stimulation. In particular, in situ electric-field-dependent X-ray diffraction (XRD) measurements have been extensively utilized for understanding the underlying mechanisms of the emerging electromechanical responses to external electric field in various ferroelectric, piezoelectric, and electrostrictive materials. This tutorial article briefly introduces basic principles/key concepts of in situ electric-field-dependent XRD analysis using a lab-scale XRD machine. We anticipate that the in situ XRD method provides a practical tool to systematically identify/monitor a structural modification of various electromechanical materials driven by applying an external electric field.

Laser-induced plasmonic sintering of metal nanoparticles (NPs) is a promising technology to fabricate flexible conducting electrodes, since it provides instantaneous, simple, and scalable manufacturing strategies without requiring costly facilities and complex processes. However, the metal NPs are quite expensive because complicated synthesis procedures are needed to achieve long-term reliability with regard to chemical deterioration and NP aggregation. Herein, we report laser-induced Ag NP self-generation and sequential sintering process based on low-cost Ag organometallic material for demonstrating highquality microelectrodes. Upon the irradiation of laser with 532 nm wavelength, pre-baked Ag organometallic film coated on a transparent polyimide substrate was transformed into a high-performance Ag conductor (resistivity of 2.2 × 10^-4 Ω·cm). To verify the practical usefulness of the technology, we successfully demonstrated a wearable transparent heater by using Ag-mesh transparent electrodes, which exhibited a high transmittance of 80% and low sheet resistance of 7 Ω/square.

Ultrasonic sensor is suitable as a next-generation autonomous driving assist device because its lower price compared to that of other sensors and its sensing stability in the external environment. Although Pb(Zr, Ti)O₃ (PZT)-relaxor ferroelectric system has excellent piezoelectric properties, the change in capacitance is large in the daily operating temperature range due to the low phase transition temperature. Recently, many studies have been conducted to improve the temperature stability of ferroelectric ceramics by controlling the grain size and crystal structure, so it is necessary to study the effect of the grain size on the piezoelectric properties and the temperature stability of PZT-relaxor ferroelectric system. In this study, the piezoelectric properties, phase transition temperature, and temperature coefficient of capacitance (TCC) of 0.9 Pb(Zr_1-xTi_x)O₃-0.1 Pb(Zn_1/3Nb_2/3)O₃ (PZT_x-PZN) ceramics with various grain sizes were investigated. PZT_x-PZN ceramics with larger grain size showed higher piezoelectric properties and temperature stability, and are expected to be suitable for ultrasonic devices in the future.

The electro-thermal erasing (ETE) configuration utilizes Joule heating intentionally generated at word-line (WL). The elevated temperature by heat physically removes stored electrons permanently within a very short time. Though the ETE configuration is a promising next generation NAND flash memory candidate, a consideration of power efficiency and erasing speed with respect to device structure and its scaling has not yet been demonstrated. In this context, based on 3-dimensional (3-D) thermal simulations, this paper discusses the impact of device structure and scaling on ETE efficiency. The results are used to produce guidelines for ETEs that will have lower power consumption and faster speed.

This paper reports a method to use a wireless sensor network deployed in the field to real-time monitor soil moisture, warning when the moisture level reaches a specific value, and wirelessly controlling an additional device (LED or water supply system, etc.). In addition, we report all processes related to wireless irrigation system, including field deployment of sensors, real-time monitoring using a smartphone, data calibration, and control of additional devices deployed in the field by smartphone. A commercially available open-source Internet of Things (IoT) platform, NodeMCU, was used, which was combined with a 9V battery, LED and soil humidity sensor to be integrated into a portable prototype. The IoT-based soil humidity sensor prototype deployed in the field was installed next to a tree for on-site demonstration for the measurement of soil humidity in real-time for about 30 hours, and the measured data was successfully transmitted to a smartphone via Wifi. The measurement data were automatically transmitted via e-mail in the form of a text file, stored on the web, followed by analyses and calibrations. The user can check the humidity of the soil real-time through a personal smartphone. When the humidity of a soil reached a specific value, an additional device, an LED device, placed in the field was successfully controlled through the smartphone. This LED can be easily replaced by other electronic devices such as water supplies, which can also be controlled by smartphones. These results show that farmers can not only monitor the condition of the field real-time through a sensor monitoring system manufactured simply at a low cost but also control additional devices such as irrigation facilities from a distance, thereby reducing unnecessary energy consumption and helping improve agricultural productivity.

In order to widely disseminate LED lighting, LED lighting technology that directly uses AC commercial power has been recently introduced. AC powered LED lighting technology has a problem in that the light brightness of the LED changes because the voltage applied to the LED and the current flowing through the LED continuously change. In this study, when the LED current is greater than the design current, the current control signal generated by the controller is supplied to the current source to supply only the design current to the LED by increasing the voltage drop at the current source. If it is smaller than the design current, the controller is adjusted so that the current is supplied only to the LED without a voltage drop in the current source. It can be seen that the higher the maximum rectified voltage, the faster the lighting time of the LED light emitting block is, so that the power factor of the LED lighting is improved. The LED lighting technology proposed in this study enables LED lighting with constant light brightness, reduced power consumption, and long lifetime.

Recently, piezoelectric devices, such as ultrasonic surgery, ultrasonic atomizer, and ultrasonic speaker, are analyzed and designed by finite element simulation methods. However, the discrepancy between the design and the experiment results of the device typically occurs due to the inaccuracy of the piezoelectric material properties. To improve the simulation accuracy, the material properties of the PZT ceramics were better refined using parameter estimation method. The material parameters are elastic stiffness c^E_ij and piezoelectric constant e_ij of PZT ceramics. The impedance curve characteristics for the LTE mode of PZT ceramics were calculated. The mismatch between the simulation and the experimental data were compared and minimized by a least square method. Finally, the simulated impedance data were compared with the experimental data for the various vibration modes of PZT ceramics and the optimized material properties of PZT ceramics were verified. To further verify the accuracy, this method was also applied to piezoelectric PMN-PT single crystals.

As a process to improve the insulation performance of VIs (Vacuum Interrupters), AC voltage conditioning is generally adopted by many manufacturers. Although the insulation performance is enhanced easily with AC Voltage conditioning, it has limitations when high recovery voltage is required due to high voltage rate or capacitive current switching. In particular, impurities such as oxides segregated on the electrode surface can be removed not by the energy level of the voltage conditioning but by the higher energy level achieved by the current conditioning process In this article, the current conditioning was carried out in various conditions and its validity was examined. The current conditioning was processed by changing the amplitude of applied current, arc time, the number of tests, and frequency. The insulation performance and the status of contact surface were checked as well. We concluded that as the applied charge quantity and the conditioning coverage area increase, the conditioning effect is much higher.

Generally, diamond-like carbon films (a-C:H, DLC) have been shown to have a low coefficient of friction, a high hardness and a low wear rate. Pd-doped C thin film was fabricated using a dual magnetron sputtering with two targets of graphite and palladium. Graphite target RF power was fixed and palladium target RF power was varied. The structural, physical, and surface properties of the deposited thin film were investigated, and the correlation among these properties was examined. The doping ratio of Pd increased as the RF power increased, and the surface roughness of the thin film decreased somewhat as the RF power increased. In addition, the hardness value of the thin film increased, and the adhesive strength was improved. It was confirmed that the value of the contact angle indicating the surface energy increases as the RF power increases. It was concluded that the increase in RF power contributed to the improvement of the physical properties of Pd-doped C thin film.

In this study, SiO₂ 20 phr, ATH 70 phr, and platinum flame retardant were mixed with raw silicone rubber and -10 kV was applied to measure electrostatic charge attenuation voltage, surface resistance, and volume resistance, and the following conclusions were obtained. When the platinum flame retardant was 0 phr, the humidity 74.6% and the temperature was 21.8℃, the potential was half-reduced to 0.63 kV, 0.57 kV, and 0.44 kV when the applied voltage was changed from -10 kV to -8 kV, and the time halved to 50% was increased to 2.40 seconds, 2.47 seconds, and 2.61 seconds. It was confirmed that as the platinum flame retardant increased from 0.1 to 0.3 phr, the potential half-reduced to 0.67 kV, 0.60 kV, and 0.595 kV decreased, and the charge potential attenuation time half-reduced to 50% decreased to 3.44 seconds, 1.78 seconds, and 1.60 seconds. It was confirmed that the surface resistance increased as the humidity decreased, and the volume resistance decreased as the platinum flame retardant increased.

La_0.7Sr_0.3MnO₃ precursor solution were prepared by a sol-gel method. La_0.7Sr_0.3MnO₃ thin films were fabricated by a spin-coating method on a Pt/Ti/SiO₂/Si substrate. Structural and electrical properties with the variation of sintering temperature were measured. All specimens exhibited a polycrystalline orthorhombic crystal structure, and the average thickness of the specimens coated 6 times decreased from about 427 nm to 383 nm as the sintering temperature increased from 740℃ to 830℃. Electrical resistance decreased as the sintering temperature increased. In the La_0.7Sr_0.3MnO₃ thin films sintered at 830℃, electrical resistivity, TCR, B-value, and activation energy were 0.0374 mΩㆍcm, 0.316%/℃, 296 K and 0.023 eV, respectively.

Single crystal gallium oxide (Ga₂O₃) has been an emerging material for power semiconductor applications. However, the defect distribution of Ga₂O₃ substrates needs to be carefully characterized to improve crystal quality during crystal growth. We analyzed the type and the distribution of defects on commercial (-201) Ga₂O₃ substrates to get a basic standard prior to growing Ga₂O₃ crystals. Etch pit technique was employed to expose the type of defects on the Ga₂O₃ substrates. Synchrotron white beam X-ray topography was also utilized to observe the defect distribution by a nondestructive manner. We expect that the observation of defect distribution with three-dimensional geometry will also be useful for other crystal planes of Ga₂O₃ single crystals.

As the 4th industrial revolution based on ICT is progressing in the manufacturing field, interest in building smart factories that can be flexible and customized according to customer demand is increasing. To this end, it is necessary to maximize the efficiency of factory by performing an automated process in real time through a network communication between engineers and equipment to be able to link the established IT system. It is also necessary to collect and store real-time data from heterogeneous facilities and to analyze and visualize a vast amount of data to utilize necessary information. Therefore, in this study, four types of controllers such as PLC, Arduino, Raspberry Pi, and embedded system, which are generally used to build a smart factory that can connect technologies such as artificial intelligence (AI), Internet of Things (IoT), and big data, are configured. This study was conducted for the development of a program that can collect and store data in real time to visualize and manage information. For communication verification by controller, data communication was implemented and verified with the data log in the program, and 3D monitoring was implemented and verified to check the process status such as planned quantity for each controller, actual quantity, production progress, operation rate, and defect rate.

We investigated the microstructure, crystal structure, dielectric, and elecromechanical strain properties of lead-free BaTiO₃ (BT)-modified (Bi_1/2Na_1/2)TiO₃-SrTiO₃ (BNT-ST) piezoelectric ceramics. Samples were prepared by a conventional ceramic processing route. Temperature dependent dielectric properties confirmed that a phase transition from a nonergodic relaxor to an ergodic relaxor was induced when the BT concentration reached 1.5 mol%, interestingly, where the average grain size reached a maximum value of 4.5 μm. At the same time, enhanced electromechanical strain (S_max/E_max = 600 pm/V) was obtained. It is suggested that the induced ferroelectric-relaxor phase transition by the BT modification is responsible for the enhancement of electromechanical strain in 1.5 mol% BT-modified BNT-ST ceramics.