The ratio of the period of a diffractive element to the input beam size is a critical parameter in a diffractive beam shaper. We measured and calculated the Fraunhofer diffraction patterns of a periodic hologram with an input beam size similar to the period of the hologram. The measured intensities show very complicated patterns and are strongly dependent upon the center position of the laser beam relative to the hologram. Using a diffraction formula for a periodic hologram, we calculated the diffracted light intensities and fit them to the measured ones. The measured and calculated intensities are in good agreement even when the beam diameter of the incident laser is similar to the period of the hologram. We can therefore use this formula to estimate the output of a periodic beam shaper even under such an extreme condition.

In this work, we have investigated the effect of a 30-min thermal anneal at 550℃ on the electrical characteristics of neutron-irradiated 4H-SiC MOSFETs. Thermal annealing can recover the on/off characteristics of neutron-irradiated 4H-SiC MOSFETs. After thermal annealing, the interface-trap density decreased and the effective mobility increased in terms of the on-characteristics. This finding could be due to the improvement of the interfacial state from thermal annealing and the reduction in Coulomb scattering due to the reduction in interface traps. Additionally, in terms of the off-characteristics, the thermal annealing resulted in the recovery of the breakdown voltage and leakage current. After the thermal annealing, the number of positive trapped charges at the MOSFET interface was decreased.

In this work, we investigate the effects of lithium doping on the electric performance of solution-processed n-type zinc tin oxide (ZTO)/p-type silicon carbide (SiC) heterojunction diode structures. The proper amount of lithium doping not only affects the carrier concentration and interface quality but also influences the temperature sensitivity of the series resistance and activation energy. We confirmed that the device characteristics vary with lithium doping at concentrations of 0, 10, and 20 wt%. In particular, the highest rectification ratio of 1.89×107 and the lowest trap density of 4.829×1,022 cm^-2 were observed at 20 wt% of lithium doping. Devices at this doping level showed the best characteristics. As the temperature was increased, the series resistance value decreased. Additionally, the activation energy was observed to change with respect to the component acting on the trap. We have demonstrated that lithium doping is an effective way to obtain a higher performance ZTO-based diode.

This paper details the design of a 1,200 V class trench gate field stop IGBT (insulated gate bipolar transistor) with a nano gate structure smaller than 1 um. Decreasing the size is important for lowering the cost and increasing the efficiency of power devices because they are high-voltage switching devices, unlike memory devices. Therefore, in this paper, we used a 2-D device and process simulations to maintain a gate width of less than 1 um, and carried out experiments to determine design and process parameters to optimize the core electrical characteristics, such as breakdown voltage and on-state voltage drop. As a result of these experiments, we obtained a wafer resistivity of 45 Ω·cm, a drift layer depth of more than 180 um, an N+ buffer resistivity of 0.08, and an N+ buffer thickness of 0.5 um, which are important for maintaining 1,200 V class IGBTs. Specially, it is more important to optimize the resistivity of the wafer than the depth of the drift layer to maintain a high breakdown voltage for these devices.

The phase evolution, microstructure, and microwave dielectric properties of Ba(Mg_0.5-2xY_2xW_0.5-xTi_x)O₃ (x＝ 0.005~0.05) ceramics sintered at 1,700℃ for 1h were investigated. All compositions exhibited a 1:1 ordered cubic perovskite structure. The field emission scanning electron microscopy image revealed a dense microstructure in all the compositions. As the value of x increased, the lattice parameter, dielectric constant, and quality factor increased. The temperature coefficient of resonant frequency changed from -19.6 ppm/℃ to -5.9 ppm/℃ with increasing x value. The dielectric constant, quality factor, and temperature coefficient of resonant frequency of Ba(Mg_0.40Y_0.10W_0.45Ti_0.05)O₃ were 21.7, 132,685 GHz, and -5.9 ppm/℃, respectively.

The piezoelectric properties of 0.65Pb(Zr_1-xTi_x)O₃-0.35Pb(Zn_1/6Ni_1/6Nb_2/3)O₃ (PZT_x-PZNN) ceramics with 0.530≤ x≤0.555 were investigated for application to piezoelectric energy harvesters. Although a morphotropic phase boundary (MPB) was found at approximately x＝0.545, the ceramic with the highest figure of merit (FOM) (d₃₃×g₃₃) was observed at a composition of x＝0.540. Values of this figure of merit, d₃₃×g₃₃, of 19.6 pm²/N and 20.2 pm²/N were obtained from PZT_0.540-PZNN ceramics sintered at 920℃ and 950℃, respectively. A high output power of 937 μW and a high power density of 3.3 mW/cm³ were obtained from unimorph-type piezoelectric energy harvesters fabricated using PZT_0.540-PZNN ceramic sintered at 920℃ for 4h.

In this work, in order to effectively improve the electrical conductivity and visible light transmittance of ZnO thin films, ZnO single layer and ZnO/Ag bi-layer films were deposited on glass substrates by radio frequency and direct current magnetron sputtering, and then, the effects of an Ag buffer layer and electron beam irradiation on the electrical and optical properties of the films were investigated. The observed results indicate that ZnO 100 nm / Ag 7 nm films show higher opto-electrical performance than the ZnO single layer film. In addition, electron beam irradiation also effectively enhanced the visible transmittance and electrical conductivity of the ZnO/Ag bi-layer films.

Pure BiFeO₃ (BFO) and codoped Bi_0.9A_0.1Fe_0.975Zn_0.025O_3-δ (A=Eu, Dy) thin films were prepared on Pt(111)/ Ti/SiO₂/Si(100) substrates by chemical solution deposition. The remnant polarizations (2Pr) of the Bi_0.9Eu_0.1Fe_0.975Zn_0.025O_3-δ (BEFZO) and Bi_0.9Dy_0.1Fe_0.975Zn_0.025O_3-δ (BDFZO) thin films were about 36 and 26 μC/cm² at the maximum electric fields of 900 and 917 kV/cm, respectively, at 1 kHz. The codoped BEFZO and BDFZO thin films showed improved electrical properties, and leakage current densities of 3.68 and 1.21×10^-6 A/cm², respectively, which were three orders of magnitude lower than that of the pure BFO film, at 100 kV/cm.

In this study, two important requirements for the home production of a robot to detect and remove improvised explosive devices (IEDs) are presented in terms of the total cost for robot system development and the performance improvement of the mine detection technology. Firstly, cost analyses were performed in order to provide a reasonable solution following an engineering estimate method. As a result, the total cost for a mass production system without the mine detection system was estimated to be approximately 396 million won. For the case including the mine detection system, the total cost was estimated to be approximately 411 million won, in which labor costs and overhead charges were slightly increased and the material costs for the mine detection system were negligible. Secondly, a method for fabricating the carbon nanotube (CNT) based gas detection sensor was studied. The detection electrodes were formed by a photolithography process using a photosensitive CNT paste. As a result, this method was shown to be a scalable and expandable technology for producing excellent mine detection sensors. In particular, it was found that surface treatments by using adhesive taping or ion beam bombardment methods are effective for exposing the CNTs to the ambient air environment. Fowler-Nordheim (F-N) plots were obtained from the electron-emission characteristics of the surface treated CNT paste. The F-N plot suggests that sufficient electrons are available for transport between CNT surfaces and chemical molecules, which will make an effective chemiresistive sensor for the advanced IED detection system.

A nanofiber was fabricated with carbon nanotubes for transparent electrodes. It was prepared with a composite solution of bio-molecules polycaprolactone (PCL) and multiwalled carbon nanotubes (MWCNTs) by electrospinning on a glass substrate, following which its electrical characteristics were investigated. The content of MWCNTs was varied during electrospinning, while that of PCL was fixed. Further, a nanometer-thick thin film of silver was deposited on the nanofiber layer using a thermal evaporator to improve the electrical characteristics; the sheet resistance significantly reduced after this deposition. The results showed that this carbon nanotube nanofiber has potential applications in biotechnology and as a flexible transparent display material.

We propose a method for improving the reliability of a solar cell by applying a fluorinated surface coating to protect the cell from the outdoor environment using an atmospheric pressure plasma (APP) treatment. An APP source is operated by radio frequency (RF) power, Ar gas, and O₂gas. APP treatment can remove organic contaminants from the surface and improve other surface properties such as the surface free energy. We determined the optimal APP parameters to maximize the surface free energy by using the dyne pen test. Then we used the scratch test in order to confirm the correlation between the APP parameters and the surface properties by measuring the surface free energy and adhesive characteristics of the coating. Consequently, an increase in the surface free energy of the cover glass caused an improvement in the adhesion between the coating layer and the cover glass. After treatment, adhesion between the coating and cover glass was improved by 35%.

We researched about a bulk metallic glass system as an additive to an Ag paste for high temperature thermoelectric modules. Bulk metallic glass (BMG) ribbons were produced by using a rapid solidification process (RSP) under a cooling rate condition higher than 10℃/sec. We investigated BMG characteristics of the ribbons by means of x-ray diffraction (XRD) and differential scanning calorimetry (DSC) in order to evaluate the glass transition temperature (Tg) and the recrystallization temperature (Tx) lower than 400℃. A milling process was also developed to apply the BMG ribbons to a commercial Al paste as an additive for lower sintering temperature.

In recent years, increasing electricity use has led to considerable interest in green energy. In order to effectively supply, cut off, and operate an electric power system, many electric power facilities such as gas insulation switch (GIS), cable, and large substation facilities with higher densities are being developed to meet demand. However, because of the increased use of aging electric power facilities, safety problems are emerging. Electromagnetic wave and leakage current detection are mainly used as sensing methods to detect live-line partial discharges. Although electromagnetic sensors are excellent at providing an initial diagnosis and very reliable, it is difficult to precisely determine the fault point, while leakage current sensors require a connection to the ground line and are very vulnerable to line noise. The partial discharge characteristic in particular is accompanied by statistical irregularity, and it has been reported that proper statistical processing of data is very important. Therefore, in this paper, we present the results of analyzing Φ-q-n cluster distributions of partial discharge characteristics by using K-means clustering to develop an expert partial discharge diagnosis system generated in a GIS facility.

When the clamp meter approaches the electric path where current is flowing, leakage current can be measured at a distance from the electric current because the induced current increases as the magnitude of the current increases and approaches nearer to the electric path. Therefore, measurements were carried out from a distance to avoid this effect. In addition, the measured values differ depending on the location of the power line that penetrates the ZCT of the clamp meter, thus measurements were performed at a location where this effect was minimized. The fraction of compliant branch circuits, whose leakage current was lower than 1.00 mA, was found to be 69.0% out of the total of 439 branch circuits, while the percentage of compliant branch circuits having an insulation resistance higher than 0.20 MΩ was found to be 93.2%. The reason why the percentage of compliant branch circuits with low leakage current was low might be due to the inclusion of capacitive leakage current in the total measured leakage current.

A high directivity TIR (total internal reflection) lens in the UV-A region was designed using a silicone resin, and a UV light source module with a maximum irradiation density of 150 mW/cm² was fabricated. The beam angle of the TIR lens was designed to be 8.04° and the maximum diameter of the TIR lens was ø13.5. A silicone resin having a UV transmittance of 93% and a refractive index of 1.4 at a wavelength of 365 nm was used, and the lens was manufactured using an aluminum mold, from which silicone could be easily released. The module was fabricated in a metal printed circuit board of COB (chip on board) type using a 0.75×0.75 mm² UV chip. A jig was used to adjust the focal length between lens and chip and to fix the position of the lens. The optical characteristics such as illumination distributions of the lens and module were designed using ‘LightTools’ optical simulation software. The heat dissipation system was designed to use a forced-air cooling method using a heat-sink and fan.