The current downturn of BIPV sector has an enprmous potential to rebound and expand into the PV sector for construction market in the foreseeable future. Solar technology has already gained a significant market due to lack of natural resources in the Korean domestic market. Given the technical infrastructure of state-of-the-art fusion technology, the competitiveness of software-driven BIPV market in the world can bever attractive and have the potential to develop as a key national technology. To do this, from the viewpoint of complexity, technical R&D, national political aspect, social aspect, economic aspect and institutional support systems need to be parallelly formulated, A dedicated BIPV sector has not yet been established, especially policy and institutional framework have very crucial impact on the establishment of BIPV sector.

As packing density in integrated circuits increases, multilevel metallization process has beenwidely used. But hillock formed in the bottom layers of aluminum are well known to make interlayershort in multilevel metallization. In this study, the effects of ion implantation to the metal film anddeposition temperature on the hillock formation were investigated. The Al-1%Si thin film of 1 ㎛thickness was DC sputtered with substrate (SiO2/Si) temperature of 20℃, 200℃, and 400℃, respectively. Ar ions (1×1015 cm-2: 150 keV) and B ions (1×1015 cm-2, 30 keV, 150 keV) were implanted to the Al-Sithin film. The deposited films were evaluated by SEM, surface profiler and resistance measuring system. As a results, Ar implanting to Al-Si film is very effective to reduce hillock size in the metal depositiontemperature below than 200℃, and B implanting to an Al-Si film is effective to reduce hillock density inthe high temperature deposition conditions around 400℃. Line width less than 3 ㎛ was free of hillockafter alloying.

In this study, lead-free Piezoelectric (Na0.47K0.47Sr0.03Ca0.03)(Nb0.94Ti0.06)O3-0.1 MnO2 ceramics werefabricated using mixed oxide method and the effects of various sintering temperature on the structural andelectrical properties were investigated. For the (Na0.47K0.47Sr0.03Ca0.03)(Nb0.94Ti0.06)O3-0.1 MnO2 (NKN-SCT-MnO2)ceramics sintered at temperatures of 1,025∼1,100℃. The results indicated that all specimens were perovskitesingle phase formation without any second phase. It has been shown that relative density is increased toincreasing sintering temperature. When the sintered temperature at 1,075℃, highest sintered density andmaximum value of 4.45 g/cm3. Average grain size is increased to increasing sintering temperature. Theelectromechanical coupling factor, dielectric constant, dielectric loss, d33 and curie temperature at the sinteringtemperature 1,075℃ of NKN-SCT-MnO2 specimens were 0.22, 511, 0.033, 103 and 380℃, respectively.

Because the Pb-based piezoelectric materials showed problems such as an environmentalpollution. lead-free ZnSnO3 materials were studied in the present study. The ZnSnO3 thin films weredeposited at 640℃ on Pt/Ti/SiO2 substrate by pulsed laser deposition (PLD) and were annealed for 5 minat 750℃ using rapid thermal annealing (RTA) in nitrogen atmosphere. Samples annealed at 750℃ showeda smooth morphology and an improvement of the dielectric and leakage properties, as compared withas-grown samples. However, electrical properties of the ZnSnO3 thin films obtained in the present studyshould be improved for piezoelectric applications.

(Ba0.85Ca0.15)(Ti0.9Zr0.1)O3+0.04wt% CeO2 lead-free ceramics were prepared by conventional oxide-mixed method and the effect of sintering temperature on microstructure, dielecrric and piezoelectric properties were investigated. Improved piezoelectric properties have been observed at 1,400℃ sintering temperature which show the optimal electrical properties, kp~0.412, d33~316 Pc/N, Qm~144, ~3,345 and Tc~85℃. These results show that the sintering temperature plays an important role in piezoelectric properties.

In this paper, PZT piezoelectric ceramic specimens with 4 compositions (Zr/Ti=50/50, 53/47, 56/44, 58/42) in Pb(Zr,Ti)O3 system were fabricated. We studied effects of poling strength and thermal aging on the temperature characteristics of eletromechanical coupling factor k31 of the specimens, which were poled with the DC electric fields, 1.5, 2.5 and 3.5 kV/mm respectively and thermally aged for an hour at 200℃. The eletromechanical coupling factor k31 of the specimen with the composition Zr/Ti=53/47, nearest to the morphotropic phase boundary decreased the most greatly, irrelevant to the intensity of poling field, due to 1st thermal aging. And the temperature coefficient of eletromechaical coupling factor k31 was(-) in the ereragonal phase composition and (+) in the rhombohedral phase composition, which is reverse in the temperature coefficient of resonance frequency. It is interesting that eletromechanical coupling factor k31 of PZT ceramics is shown to be able to be able to increase as temperature increase in the interval -20~80℃.

In this work, according to temperature and time of hydrothermal synthesis, the electrochemical properties of TiIO2 particle using TTIP based on thanging temperature and time in the hydrothermal synthesis were analyzed and optimized temperature and time were derived. When hydrothermal synthesis were analyzed and optimized temperature and time were derived. When hydrothermal synthesis temperature and time were 200℃ and 1 h, respectively. The fabricated DSSC delivered the best electrochemical properties. In that case, TiO2 particle size was 13.018 nm, electron transport time was 2.34×103s and recombination time was 4.01×102s. The lowest impedance of 13.52 Ω and Voc, Jsc, FF is 0.70 V, 11.50 mAcm2, 65.62%, respectively and corresponding efficiency of 5.34% was considered as the optimal.

Silicon nitride thin film deposited with Plasma Enhanced Chemical Vapor Deposition was treated by a nitrogen plasma generated by Inductively Coupled Plasma at room temperature. The treatment was investigated by Fourier Transform Infrared Spectroscopy and Atomic Force Microscopy on the surface at various RF source powers at two RF bias powers. The amount of hydrogen was reduced and the surface roughness of the films was decreased remarkably after the plasma treatment. In order to understand the causes, we analyzed the plasma diagnostics by Optical Emission Spectroscopy and Double Langmuir Probe. Based on these analysis results, we show that the nitrogen plasma treatment was effective in the improving of the properties silicon nitride thin film for flexible display.

We have fabricated white organic light-emitting diodes (OLEDs) using several thicknesses ofelectron-transport layer. The multi-emission layer structure doped with red and blue phosphorescent guestemitters was used for achieving white emission. 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) wasused as an electron-transport layer. The thickness of BCP layer was varied to be 20, 55, and 120 nm. The current efficiency, emission and recombination characteristics of multi-layer white OLEDs wereinvestigated. The BCP layer thickness variation results in the shift of emission spectrum due to therecombination zone shift. As the BCP layer thickness increases, the recombination zone shifts toward theelectron-transport layer/emission-layer interface. The white OLED with a 55 nm thick BCP layerexhibited a maximum current efficiency of 40.9 cd/A.

It was firstly found in 1st group element. Recently, it has been reported on the improvement ofefficiency of the OLEDs by introducing thin layer of some carbonate materials of alkali metal. In order toimprove the efficiency of OLEDs which is one of the next generation displays, we have studied the electricalcharacteristics of the device depending on the thickness ratio of the hole-injection layer to theelectron-injection layer. Teflon-AF was used as the hole-injection material, and alkali-metal carbonates ofLi2CO3 were used as the electron-injection materials. To obtain a proper thickness ratio, we manufactured. Fourtypes of devices with the thickness ratio of HIL to EIL were made to be 1 : 4, 2 : 3, 3 : 2, and 4 : 1. Theresults of electrical and optical properties showed that the device with the thickness ratio of 4 : 1 is the mostexcellent result. In addition, to prepare a four-layer device by inserting the α-NPD is a hole transportingmaterial was compared with three-layer element. As a result, the maximum luminance, the maximum luminousefficiency, maximum external quantum efficiency of about 124 [%], 164 [%], 106 [%] improve was confirmed.

The polyimide composite membranes were prepared with polyimide composite solutions including graphenes by using the phase inversion method. The morphologies of these membranes were significantly changed according to the grapheme loadings in composite solutions and the solvent systems of the composite solutions. The finger-like macro-voids were formed in the hollow fiber membranes which were prepared in the NMP solvent system with a small amount of ethanol. As increasing the content of the viscous alcohols such as glycerol or 1.3-propanediol in the composite solution, however, the morphologies of the hollow fiber membranes were changed to sponge-like types. In case of flat membranes, the increase of grapheme content in polyimide composites causes that their membranes change from the finger-like macro-porous to sponge-like morphologies.

In this paper, we have researched semiconductor optical filters to solve the problem of the high failure rate that are recognize bad of financial account, jam of financial account and the ATM service interruption due to failure of accurate location information among the operation of the ATM (automatic teller machine) systems. A semiconductor optical filters that have high resolution and less diffuse, high transmittance are able to detect the information of financial account surface accurately. Therefore, it is a stable filter that is able to minimize the incidence of disability. In this paper, we drew the determinants by element for implement an excellent semiconductor optical filters. Based on this, we had to be able to implement the semiconductor optical filter that is able to be mounted on the actual ATM system through future studies.